2SD2012
Online Anfrage
2SD2012
- Menge
- 7
- Hersteller
- Datecode
- Beschreibung
- Japan-Transistor npn 60 V 3.0 A 2.0 W
2SD2012
- Menge
- 10
- Hersteller
- Datecode
- Beschreibung
2SD2012
- Menge
- 16
- Hersteller
- Datecode
- Beschreibung
Technische Spezifikation 2SD2012
Polarity | NPN |
Power Dissipation | 25.0 W |
REACH SVHC Compliance | No SVHC |
Lead-Free Status | Lead Free |
Mounting Style | Through Hole |
Packaging | Tube |
Lifecycle Status | Not Recommended for New Designs |
RoHS | Compliant |
Number of Pins | 3 |
Ihre Hotline für ein Angebot: Tel. 0721 15108-0
Weitere Bauteile
Bezeichnung | Hersteller | Datecode | Beschreibung |
---|---|---|---|
2SD1981 | Japan-Transistor npn 80 V 2.0 A 1.0 W | ||
2SD1991 | Japan-Transistor npn 99 V 99 mA 99 mW | ||
2SD1994 | Japan-Transistor npn 99 V 99 mA 99 mW | ||
2SD1997 | Japan-Transistor npn 30 V 3.0 A 1.5 W | ||
2SD200 | Japan-Transistor npn 1500 V 2.5 A 10 W | ||
2SD2012-TO220 | Japan-Transistor npn 60 V 3.0 A 2.0 W TO220 | ||
2SD2012-TO3 | Japan-Transistor npn 99 V 99 mA 99 mW TO3 | ||
2SD2018 | Japan-Transistor npn 60 V 1.0 A 1.2 W | ||
2SD2061 | Japan-Transistor npn 99 V 99 mA 99 mW | ||
2SD2088 | Japan-Transistor npn 99 V 99 mA 99 mW |