STP5NB80 ST
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STP5NB80
- Qty
- 2
- Manufacturer
- ST
- Datecode
- Description
- Transistor
Technical Specification STP5NB80
Polarity | N-Channel |
Breakdown Voltage [Gate to Source] | -30.0 V to 30.0 V |
Continuous Drain Current (Ids) | 5.00 A |
RoHS | Non-Compliant |
Breakdown Voltage (Drain to Source) | 800 V |
Packaging | Tube |
Case/Package | TO-220 |
Drain to Source Resistance (on) (Rds) | 1.80 Ω |
Lifecycle Status | |
Power Dissipation | 110 W |
Other Manufacturers for STP5NB80
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