IRF140

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IRF140
Quantité
Fabricant
Date de fabrication
Description
N-FET

Technical Specification IRF140

Polarity N-Channel
Breakdown Voltage [Gate to Source] -20.0 V to 20.0 V
Part Family IRF140
Power Dissipation 125 W
Drain to Source Voltage (Vds) 100 V
Breakdown Voltage (Drain to Source) 100 V
Drain to Source Resistance (on) (Rds) 77.0 mΩ
Lifecycle Status
RoHS Non-Compliant
Number of Pins 2
Continuous Drain Current (Ids) 28.0 A

Other Manufacturers for IRF140

IR SILICONIX DSI Fairchild

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