IRF9510

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IRF9510
Quantité
1
Fabricant
Date de fabrication
Description
Transistor P-MOSFET 100 V 3.0 A 20 W TO220
IRF9510
Quantité
10
Fabricant
Date de fabrication
Description

Technical Specification IRF9510

Polarity P-Channel
Voltage Rating (DC) -100 V
Continuous Drain Current (Ids) 3.00 A
Breakdown Voltage (Drain to Source) -100 V
Drain to Source Voltage (Vds) 100 V
Current Rating -4.00 A
Lead-Free Status Contains Lead
Mounting Style Through Hole
Rise Time 27.0 ns
RoHS Non-Compliant
Power Dissipation 43.0 W

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