STP5NB80 ST
Online Anfrage
STP5NB80
- Menge
- 2
- Hersteller
- ST
- Datecode
- Beschreibung
- Transistor
Technische Spezifikation STP5NB80
| Polarity | N-Channel |
| Breakdown Voltage [Gate to Source] | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 5.00 A |
| RoHS | Non-Compliant |
| Breakdown Voltage (Drain to Source) | 800 V |
| Packaging | Tube |
| Case/Package | TO-220 |
| Drain to Source Resistance (on) (Rds) | 1.80 Ω |
| Lifecycle Status | |
| Power Dissipation | 110 W |
Andere Hersteller für STP5NB80
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